Numerical Modeling of Reduction in Surface-Related Lags and Current Slump in GaAs FETs
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Numerical Modeling of Reduction in Surface-Related Lags and Current Slump in GaAs FETs
IEEE TENCON 2013——We perform a two-dimensional transient analysis of field-plate GaAs MESFETs in which surface states are considered. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump due to surface states are reduced by introducing a field plate because fixed potential at the field plate leads to reducing trapping effects by the surface states. Dependence of lag phenomena and current slump on field-plate length and SiO2 passivation layer thickness is also studied, indicating that the lags and current slump can be completely removed in some cases.
ゲスト ：
Professor K. Horio
キーワード ：
GaAs FET 二维瞬态分析 瞬态特性 坍落度值 电流視頻年代：2013
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